AI Microchip Inverse Design Simulator 500× Footprint Reduction

Silicon-on-Insulator (SOI) 2D Wavefield FDTD
Design Architecture
Component Landmark Presets
Laser Source & Frequency
Excitation Wavelength1550 nm
Source Wave Amplitude1.00
AI Topology Optimizer
Interactive Etching & Perturbation

Click or drag on the core simulation viewport to introduce manufacturing defects or custom dielectric scattering pixels in real time.

Silicon (n=3.48)
SiO₂ Cladding (n=1.44)
+E-Field Phase
-E-Field Phase
Core: 2.8 µm × 2.8 µm | Grid: 64×64
Input Port Mode: TE₀ Fund. Simulating Continuous Wave... PML Boundary: Active
Quantitative Optical Telemetry
Insertion Loss
0.14 dB
Target < 0.50 dB
Footprint Reduction
480×
vs. 1.34 mm² human design
Port 1 Transmission
48.6%
Port 2 Transmission
48.4%
Crosstalk Isolation / Extinction
-32.5 dB
Clean optical port mode decoupling
Comparative Scaling Benchmark
Traditional MMI / Bend: 1400 µm × 950 µm (1.33 mm²)
AI Inverse Topology: 2.8 µm × 2.8 µm (0.0078 mm²)
Silicon Real Estate Saved: 99.79% Area Savings
Fabrication Mask & Telemetry Suite
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