Inverse Photonic Chip Synthesizer

500x Area Reduction 2.4µm × 2.4µm Nanostructure EM Wave Solver Active
Grid: 64×64 (dx = 37.5nm) | Substrate: SOI
IN →
P1 (1550nm)
P2 (1310nm)
Electromagnetic waves (1550nm) inject at left port and coherently scatter through inverse-designed silicon nanostructures, constructively interfering into Port 1.
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