MLCC Dielectric Layering & Capacitance Engineering Lab

Micro-Section Physical Stack View Zoom: 15,000x

Nickel Electrode

BaTiO₃ Dielectric

Stress Field

Drag canvas to inspect internal grain alignment & electrode offset

Live Electrostatic Performance NORMAL STRESS

Effective Capacitance

10.42 µF

Nominal: 12.80 µF

Breakdown Field

0.78 MV/cm

Max Limit: 1.50 MV/cm

Equivalent Resistance

1.85 mΩ

ESL ~0.35 nH

Max Ripple Current

4.25 A rms

@ 100 kHz

Applied DC Bias Voltage 3.15 V

Operating Temp (°C) 25 °C

Frequency Impedance Spectrum |Z| (10kHz - 100MHz)

Dielectric Micro-Structure & Physical Layer Stacking Controls

Layer Count (N) 650

Dielectric Sheet Thickness (d) 0.80 µm

Active Overlap Area (A) 1.25 mm²

Barium Titanate Dielectric Constant (εr) 3200

Electrode Alignment Offset 1.2 %

Material Purity (BaTiO₃ Powder) 99.8 %

Upstream Barium Titanate Supply-Chain & Value Breakdown Est. Unit Cost: $0.0142

Map of raw chemical inputs (Barium Titanate, Nickel powder, Rare-earth dopants like Yttrium/Dysprosium) vs precise slurry tape-casting equipment overhead and high-temperature co-firing yields (Murata, Taiyo Yuden, Kyocera benchmarking).

Upstream Raw Powder (BaTiO₃ + Rare-Earth Additives) $0.0054 (38%)

Internal Electrode Nickel Paste & Silver/Copper Terminations $0.0038 (27%)

Precision Slurry Coating, Stacking & High-Temp Sintering Overhead $0.0032 (22%)

Yield Loss & Testing Reliability Margin (Purity Dependent) $0.0018 (13%)

CANONICAL SYSTEM PROOF & SPEC SHEET

MLCC layers, bias assumptions and RLC resonance

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Read the explanation

The source nominal capacitance follows the parallel plate relation, with adjacent electrode gaps connected in parallel. Six hundred fifty electrodes give six hundred forty nine gaps. Hold relative permittivity at three thousand two hundred and overlap area at one point two five square millimeters. The source one point two percent offset reduces overlap by its chosen factor point nine nine four. Start dielectric thickness at point eight micrometers. Nominal capacitance is about twenty eight point five five nine microfarads. The input and output use explicitly stated units. Increase only thickness from point eight to one point six micrometers. The marker follows capacitance from the exact source equation, which divides by thickness. Electrode count, area, permittivity and alignment factor stay fixed. The falling curve shows the inverse relationship. This compares the nominal electrostatic calculation; it does not claim that bias degradation, manufacturing yield or material structure stay unchanged in a real component. Hold thickness at one point six micrometers. Nominal capacitance is about fourteen point two eight zero microfarads, half its starting value. The marker remains still during that number. Area must be converted from square millimeters to square meters and thickness from micrometers to meters for the underlying S I calculation. The source overlap factor and permittivity are model inputs. This diagram is not a supplier specification or a measured capacitor certificate. Restore thickness to point eight micrometers, and keep the same layer, area, alignment and permittivity values. Hold temperature at twenty five degrees Celsius. Start applied voltage at zero. Nominal and effective capacitance are both about twenty eight point five five nine microfarads because the source bias and thermal factors are one. The assumed saturation field is point two five megavolts per centimeter. The operative source exponent in the degradation law is one point six. Increase applied voltage from zero to ten volts. Electric field in megavolts per centimeter is voltage divided by thickness in micrometers, times point zero one. The marker follows nominal capacitance divided by one plus field over saturation to the power one point six. The constant nominal reference remains unchanged. This is a chosen illustrative dielectric response law, not a universal barium titanate material curve. Hold applied voltage at ten volts. Field is point one two five megavolts per centimeter, half the assumed saturation scale. Effective capacitance is about twenty one point four seven five microfarads. The output marker stops while those values are read. The page explanatory panel shows a squared form, but its actual computation uses the one point six exponent shown here. The export label breakdown field contains the applied field calculation; it is not a measured breakdown threshold. Now inspect the source series R L C impedance formula at zero bias and twenty five degrees Celsius. Capacitance is the nominal twenty eight point five five nine microfarads. Source inductance is fixed at point three five nanohenries, and its modeled series resistance is about one point four three five milliohms. Begin the sample frequency at ten kilohertz. Impedance is about point five five seven three ohms. The horizontal axis is logarithmic frequency, matching the source chart domain from ten kilohertz to one hundred megahertz. Move the sample frequency upward along the computed impedance curve. Inductive reactance equals angular frequency times inductance; capacitive reactance equals one divided by angular frequency times capacitance. Their difference enters impedance squared along with series resistance squared. As the two reactances approach equality, that difference falls toward zero. The marker is evaluating the chart formula, not changing a hidden frequency slider or simulating a measured frequency sweep. Hold at the analytic resonance, about one point five nine one nine megahertz. The two reactances are each about three point five zero one milliohms and cancel in their difference. Impedance is the modeled series resistance, about one point four three five milliohms. The marker stays at the curve minimum. The fixed heat allowance, ripple current, purity, alignment, yield and cost formulas are illustrative assumptions rather than certified limits or supplier quotes. Original presets, all eight sliders, tabs, camera drag, reset view, proof refocus and the complete specification export remain available above.