Thin-Film Micrograph Scan Line
Scan: (0, 150) → (300, 150)
Scale: 1 mm total field width
Interaction: Drag or click on the image canvas above to adjust the c-AFM / KPFM line-scan trajectory across crystal boundaries.
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14 Domains Detected
Laser Local Annealing Process Design
Thermal Recrystallization
Laser Power
45 mW
Sweep Speed
12.5 mm/s
Spot Size
50 μm
c-AFM Height & KPFM Surface Potential Line Profile
Topological step height (nm) vs. Work Function potential mismatch (mV)
AFM (nm)
KPFM (mV)
CPO Circuit Bandwidth
100 GHz Target
24.2 GHz
RC Delay: 6.58 ps (Parasitic Grain Cap: 14.8 fF)
Barrier Voltage Drop:
142.5 mV
Topological Entropy
Scattering Suppression
1.84 kB/nm²
Mean Domain Size: 0.18 mm
Boundary Elimination:
18.2 %
High-Frequency S21 Response & Impedance Spectrum
Co-Packaged Optics (CPO) insertion loss across 10 GHz - 100 GHz sweep