3D

3D NAND Flash Memory Physics & Cell Simulator

BiCS FLASH Architecture
Microstate Physical Channel & Vth Shift Spectrum
Pulse: IDLE
Cell Density Architecture TLC (3 bits/cell)
Program Voltage (Vpgm) 19.5 V
Pass Voltage (Vpass) 9.0 V
P/E Cycles (Oxide Wear) 1,500
Operational Presets
State Telemetry & Proof Surface
Trapped Electrons
482
Vth Voltage
3.42 V
Read Margin
185 mV
Est. RBER
4.20e-4
Programmed Bits: 101
Oxide Damage Index: 0.152
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