Microstate Physical Channel & Vth Shift Spectrum
Pulse: IDLE
Cell Density Architecture
TLC (3 bits/cell)
Program Voltage (Vpgm)
19.5 V
Pass Voltage (Vpass)
9.0 V
P/E Cycles (Oxide Wear)
1,500
Operational Presets
State Telemetry & Proof Surface
Trapped Electrons
482
Vth Voltage
3.42 V
Read Margin
185 mV
Est. RBER
4.20e-4
Programmed Bits: 101
Oxide Damage Index: 0.152