Single-Electron 2D Memory Simulator

DEVICE PARAMETERS 2D MoS₂ QD

Gate Bias ($V_g$) 0.45 V

2D Barrier ($d$) 1.8 nm

Island Cap ($C_\Sigma$) 0.80 aF

Temperature ($T$) 300 K (Room)

OPERATIONAL PRESETS

Coulomb Blockade Condition:
Charging Energy $E_c = \frac{e^2}{2C_\Sigma} \approx$ 100.0 meV.
Thermal Noise $k_B T \approx$ 25.8 meV.
Stability Ratio $E_c / k_B T =$ 3.87 × (Room temp stable if > 3×).

        TRAPPED ELECTRONS
        0 $e^-$
      

TUNNELING PROBABILITY 4.2 × 10⁻³

SWITCHING ENERGY 0.072 aJ

READ SENSE CURRENT 48.2 nA

COULOMB STAIRCASE & STABILITY (I-V)

ENERGY DISSIPATION BENCHMARK

Technology	Per Bit Energy	Carrier Count
Single-e⁻ 2D Cell	~0.08 aJ (10⁻¹⁹ J)	1 Electron
DRAM Capacitor	~20 fJ (2×10⁻¹⁴ J)	~10⁴ Electrons
Floating-Gate Flash	~10 pJ (10⁻¹¹ J)	~10⁵ Electrons

⚡ 250,000× more energy-efficient than DRAM; transfers single quanta via 2D atomic monolayer tunneling.