Stage 1: Silicon Ingot Czochralski Crystal Growth
SUMCO CZ Process
Adjust thermal gradient and pull rate to inspect single-crystal lattice formation. Thermal shock or speed instability creates dislocation defects that permanently degrade wafer yield.
Yield & Physics Telemetry
CALCULATED LIVE
Dies Per Wafer (DPW)
642
Effective Yield
84.2%
Critical Dim. (CD)
13.5 nm
Edge Loss / Kerf
11.8%
Process Parameters
Wafer Diameter
300 mm
Die Size (Area)
120 mm²
Lithography Technology
EUV (13.5nm)
Defect Density (D0)
0.15 / cm²
Dicing Blade Kerf Width
50 µm
Ingot Pull Speed
1.2 mm/min
Die Yield Sensitivity Analysis (Murphy / Poisson Wafer Yield Model)
Y = [(1 - e-A·D) / (A·D)]2