EUV

EUV Lithography Precision & Optics Simulator

13.5nm High-NA Bench
Standard Presets:
Source: 13.5nm EUV Laser Plasma
Collector: Mo/Si Bragg Multilayer Mirror
Mode: Standard Exposure
Rayleigh Res. (CD)
13.9 nm
Sub-20nm Node Pass
Depth of Focus (DOF)
62 nm
Process Window OK
Process Factor (k1)
0.340
Stable Optical Limit
Bragg Reflectivity
68.5%
40 Mo/Si Pairs
Aerial Contrast (NILS)
0.820
High Pitch Contrast
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