EUV Lithography Precision & Optics Simulator

Standard Presets:

Source: 13.5nm EUV Laser Plasma

Collector: Mo/Si Bragg Multilayer Mirror

Mode: Standard Exposure

Rayleigh Res. (CD)

13.9 nm

Sub-20nm Node Pass

Depth of Focus (DOF)

62 nm

Process Window OK

Process Factor (k1)

0.340

Stable Optical Limit

Bragg Reflectivity

68.5%

40 Mo/Si Pairs

Aerial Contrast (NILS)

0.820

High Pitch Contrast

How EUV aperture and illustrative mirror formulas respond

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A larger numerical aperture collects a wider cone of light, but the focus window becomes thinner. This tool uses a half times wavelength divided by aperture squared. Hold wavelength at thirteen point five nanometers and begin at aperture zero point two five. The focus window is one hundred eight nanometers. Now increase aperture toward zero point five five. The cyan point follows the same inverse square formula on axes labeled in nanometers. It reaches about twenty two point three nanometers. The dashboard rounds this continuous value to an integer. This is the modeled depth of focus tradeoff, not evidence of achieved manufacturing resolution. The tool assigns critical dimension as half the chosen pitch and computes its process factor from that assignment. Changing aperture alone does not shrink the assigned critical dimension. The mirror panel uses an illustrative saturation formula, rather than a measured optical multilayer calculation. At thirteen point five nanometers, reflectivity is sixty nine point five percent times one minus an exponential of negative layer count divided by twelve. Start with ten layer pairs. Increase the layer count toward sixty. The yellow point climbs quickly at first, then the curve flattens. More layers give diminishing gains under this exact formula. The axes use layer count and percent reflectivity. The dashboard rounds reflectivity to one decimal place. At sixty pairs, this formula gives about sixty nine percent. Its assumed ceiling is sixty nine point five percent. Those numbers describe the source model. They do not certify real mirror efficiency, material absorption, angle response, or a production coating. Wavelength also changes the same illustrative mirror response. Keep forty layer pairs fixed. The source multiplies its peak by an exponential penalty based on the absolute distance from thirteen point five nanometers. Start at twelve point five. Move wavelength through thirteen point five toward fourteen point five. The cyan point rises to the centered peak and then falls symmetrically. The absolute value creates a sharp peak, shown honestly here. Both sides use the same formula and the same percent scale. At either endpoint the modeled reflectivity is about nine percent, while the center is about sixty seven percent. This is a parameter comparison, not the passage of experimental time. The contrast and resist graphics are also illustrative source proxies, not a calibrated optical field or measured wafer yield.